BAP50-02 데이터 시트보기 (PDF) - Leshan Radio Company
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BAP50-02 Datasheet PDF : 2 Pages
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LESHAN RADIO COMPANY, LTD.
BAP50-02
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
τL
LS
Note
charge carrier life time
series inductance
when switched from I F =10 mA to
I R = 6 mA; R L = 100 Ω;
measured at I R =3 mA
I F = 100 mA; f = 100 MHz
–
1.05
–
0.6
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX.
–
–
UNIT
µs
nH
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
600
10 3
f = 100 MHz; T =25°C
j
400
10 2
10
200
1
10 -1
1
10
10 2
I F (mA )
Fig.1 Forward resistance as a function of
forward current; typical values.
0
I F =10 mA.
-1
I F = 1 mA.
-2
I F = 0.5 mA.
-3
-4
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-5
0.5
1
1.5
2
2.5
3
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
f = 1 MHz; T =25°C
0
j
0
4
8
12
16
20
VR(V)
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
-5
-10
-15
-20
-25
0.5
1
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
Tamb =25°C.
1.5
2
2.5
3
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S23–2/2
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