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LT3757IMSE(RevB) 데이터 시트보기 (PDF) - Linear Technology

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LT3757IMSE
(Rev.:RevB)
Linear
Linear Technology Linear
LT3757IMSE Datasheet PDF : 36 Pages
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LT3757
Applications Information
300
250
300kHz
200
150
100
1MHz
50
0
0 5 10 15 20 25 30 35 40
VIN (V)
3757 F02
Figure 2. Recommended Maximum QG vs VIN at Different
Frequencies to Ensure INTVCC Higher Than 4.5V
An effective approach to reduce the power consumption
of the internal LDO for gate drive is to tie the INTVCC pin
to an external voltage source high enough to turn off the
internal LDO regulator.
If the input voltage VIN does not exceed the absolute
maximum rating of both the power MOSFET gate-source
voltage (VGS) and the INTVCC overvoltage lockout threshold
voltage (17.5V), the INTVCC pin can be shorted directly
to the VIN pin. In this condition, the internal LDO will be
turned off and the gate driver will be powered directly
from the input voltage, VIN. With the INTVCC pin shorted to
VIN, however, a small current (around 16µA) will load the
INTVCC in shutdown mode. For applications that require
the lowest shutdown mode input supply current, do not
connect the INTVCC pin to VIN.
In SEPIC or flyback applications, the INTVCC pin can be
connected to the output voltage VOUT through a blocking
diode, as shown in Figure 3, if VOUT meets the following
conditions:
1. VOUT < VIN (pin voltage)
2. 7.2 < VOUT < 17.5V
3. VOUT < maximum VGS rating of power MOSFET
A resistor RVCC can be connected, as shown in Figure 3, to
limit the inrush current from VOUT. Regardless of whether
LT3757
INTVCC
GND
DVCC
RVCC
VOUT
CVCC
4.7µF
3757 F03
Figure 3. Connecting INTVCC to VOUT
or not the INTVCC pin is connected to an external voltage
source, it is always necessary to have the driver circuitry
bypassed with a 4.7µF low ESR ceramic capacitor to ground
immediately adjacent to the INTVCC and GND pins.
Operating Frequency and Synchronization
The choice of operating frequency may be determined
by on-chip power dissipation, otherwise it is a trade-off
between efficiency and component size. Low frequency
operation improves efficiency by reducing gate drive cur-
rent and MOSFET and diode switching losses. However,
lower frequency operation requires a physically larger
inductor. Switching frequency also has implications for
loop compensation. The LT3757 uses a constant-frequency
architecture that can be programmed over a 100kHz to
1000kHz range with a single external resistor from the
RT pin to ground, as shown in Figure 1. The RT pin must
have an external resistor to GND for proper operation of
the LT3757. A table for selecting the value of RT for a given
operating frequency is shown in Table 1.
Table 1. Timing Resistor (RT) Value
OSCILLATOR FREQUENCY (kHz)
100
200
300
400
500
600
700
800
900
1000
RT (kΩ)
140
63.4
41.2
30.9
24.3
19.6
16.5
14
12.1
10.5
3757fb
11

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