LX5501ASE 데이터 시트보기 (PDF) - Microsemi Corporation
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LX5501ASE Datasheet PDF : 7 Pages
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LX5501A
TM
®
InGAP HBT Gain Block
PRODUCTION DATA SHEET
APPLICATION NOTE
DESIGN CONSIDERATIONS
The gain block is self-biased by the voltage that is present
on pin 5 (VBIAS). Chart 1 shows the quiescent current vs. bias
voltage characteristic. Chart 2 shows device characteristics
when operated with a 5v supply and with different values of
external resistor. Using Chart 2 it is possible to trade-off Gain
and P1dB compression point for supply current.
Supply voltages other than 5v may be accommodated by
adjusting the value of the external resistor to produce the
same quiescent current as the 5v case. To calculate the
resistor required for a different supply voltage use the
following formula:
R EXT (V1)=R EXT (5V)• (V1-VBIAS ) (5-VBIAS )
Where VBIAS is the Pin 5 bias voltage obtained from
Chart 1and V1 is the desired supply voltage.
TYPCAL QUIESCENT CURRENT VS. PIN 5
BIAS VOLTAGE @ 25°C
70
TYPCAL P1DB, GAIN AND IC VS. REXT @ 25°C
14
35
60
12
30
50
10
25
40
30
20
Icq
10
0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
Pin 5 Bias Voltage - Volts
8
6
Gain
4
Ic
P 1dB
2
0
25
75
125
Rext - ohm s
Frequency = 5.8GHz, VCC = 5V
20
15
10
5
0
175
TYPCAL S-PARAMETRS @ 25°C
18
16
14
12
10
8
6
4
2
0
2
S21
S11
S22
S12
3
4
5
Frequency - GHz
0
-5
-10
-15
-20
-25
-30
6
VCC = 5V, REXT = 50Ω
TYPCAL 2.4 GHZ CHARACTERISTICS @ 25°C
20
15
10
5
0
-5
-10
-25
P1dB = 12.0
dBm
-20
-15
-10
-5
Pin - dBm
VCC = 5V, REXT = 50Ω
50
45
40
35
30
25
20
P 1dB
P o ut
15
Gain 10
Ic
5
0
0
5
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
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