LX5506LQ 데이터 시트보기 (PDF) - Microsemi Corporation
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LX5506LQ Datasheet PDF : 10 Pages
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LX5506
TM
®
InGaP HBT 4.5 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Test conditions: Vcc = 3.3V, Vref = 2.9V, Icq = 100mA, TA = 25°C, unless otherwise specified.
Parameter
Condition
Frequency Range
Output Power at 1dB Compression
Power Gain at Pout=18dBm
EVM at Pout=18dBm
64QAM/54Mbps
Total Current at Pout=18dBm
Quiescent Current
Bias Control Reference Current
For Icq=100mA
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Over 200MHz
-40 to +85oC
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Pout = 18dBm
Third Harmonic
Pout = 18dBm
Ramp-On Time
10 - 90%
Note a) Vref = 2.9V b)Vref = 3.0V
Symbol
f
Pout
Gp
Ictotal
Icq
Iref
S21
ΔS21
ΔS21
S11
S22
S12
tON
Min.
5.15
25
21
Typ.
26
23
3
190
100
2.2
22
+/-0.5
3 a), 1 b)
-15
-7
-40
-40
-40
100
Max.
5.35
-10
Min.
5.7
25
19
Typ.
26
21
3
200
100
2.2
20
+/-0.5
2 a), 1 b)
-15
-15
-40
-60
-40
100
Max.
5.85
-10
Unit
GHz
dBm
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
ns
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
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