LX5506LQ 데이터 시트보기 (PDF) - Microsemi Corporation

부품명

상세내역

제조사

LX5506LQ

InGaP HBT 4.5 – 6GHz Power Amplifier

Microsemi Corporation 

LX5506

TM

®

InGaP HBT 4.5 – 6GHz Power Amplifier

PRODUCTION DATA SHEET

APPLICATION NOTE

Recommended BOM

Location

Value

C1/C2

0.5/0.5pF (0402)

C3

220pF (0402)

C4=C6

1µF (0603)

C5=C8

10µF (0805)

C7

1nF (0402)

R1/R2/R3

100/604/909Ω (0402)

R4/R5

10/10Ω (0402)

R6

Substrate

0 Ω (For Vref=2.9V,

Adjustable for Different Vref)

10mil GETEK

εr = 3.9, tan δ = 0.02

Notes:

1) C1/C2 position should be ~30mil from MLP package

edge connected with 50 Ohm microstrip.

2) All other component positions are not critical.

3) R6 should be adjusted to maintain nominal Icq for

different available Vref values (see R6-Vref plot).

4) For Vref<2.9V operation please contact technical

support for BOM modification.

5) C6 can be eliminated when VC/VCC pins are tied

together in multiplayer board layout.

6) C7 ensures ~100ns switching time for PA on/off.

7) For PA switching speed test C8 should be moved to

input side of the switch.

Note: For higher output power

applications VC can be increased up

to 5V with +/-10% tolerance. Contact

Microsemi for details on application

circuit schematic and BOM.

Copyright © 2003

Rev. 1.2c, 2005-08-18

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 7

Share Link: