M24164-BN3 데이터 시트보기 (PDF) - STMicroelectronics

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M24164-BN3

16 Kbit Serial I2C BUS EEPROM

STMicroelectronics 

M24164

TWO WIRE I2C SERIAL INTERFACE

SUPPORTS 400kHz PROTOCOL

1 MILLION ERASE/WRITE CYCLES

40 YEARS DATA RETENTION

2ms TYPICAL PROGRAMMING TIME

SINGLE SUPPLY VOLTAGE:

– 4.5V to 5.5V for M24164

– 2.5V to 5.5V for M24164-W

– 1.8V to 5.5V for M24164-R

HARDWARE WRITE CONTROL

BYTE and PAGE WRITE (up to 16 BYTES)

BYTE, RANDOM and SEQUENTIAL READ

MODES

SELF TIMED PROGRAMMING CYCLE

AUTOMATIC ADDRESS INCREMENTING

ENHANCED ESD/LATCH-UP

PERFORMANCES

16 Kbit Serial I2C BUS EEPROM

PRELIMINARY DATA

8

1

PSDIP8 (BN)

0.25mm Frame

8

1

SO8 (MN)

150mil Width

Figure 1. Logic Diagram

DESCRIPTION

The M24164 is a 16 Kbit EEPROM. The memory

is an electrically erasable programmable memory

(EEPROM) fabricated with STMicroelectronics’s

High Endurance Single Polysilicon CMOS technol-

ogy which guarantees an endurance typically well

above one million erase/write cycles with a data

retention of 40 years. The "-W" version operate with

a power supply value as low as 2.5V and the "-R"

version operate down to 1.8V.

Both Plastic Dual-in-Line and Plastic Small Outline

packages are available.

Table 1. Signal Names

E0-E2

Chip Enable Inputs

SDA

Serial Data Address Input/Output

SCL

Serial Clock

WC

Write Control

VCC

Supply Voltage

VSS

Ground

VCC

3

E0-E2

SCL

WC

M24164

SDA

VSS

AI02264

January 1999

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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