MBR860(2002) 데이터 시트보기 (PDF) - LiteOn Technology
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MBR860 Datasheet PDF : 2 Pages
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LITE-ON
SEMICONDUCTOR
SCHOTTKY BARRIER RECTIFIERS
MBR830 thru MBR860
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 8.0 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
B
C
K
PIN
1
2
I
H
PIN 1
PIN 2
TO-220AC
L
TO-220AC
M
DIM.
MIN. MAX.
D
A
14.22 15.88
A
B
9.65 10.67
C
2.54 3.43
E
D
5.84 6.86
E
8.26 9.28
F
F
-
6.35
G
12.70 14.73
G
H
4.83 5.33
J
I
0.51 1.14
J
0.30 0.64
N
K
3.53 4.09
L
3.56 4.83
M
1.14 1.40
CASE
N
2.03 2.92
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL MBR830 MBR835 MBR840 MBR845 MBR850 MBR860 UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
30
Maximum RMS Voltage
VRMS
21
Maximum DC Blocking Voltage
VDC
30
Maximum Average Forward Rectified
Current at TC=125 C (See Fig.1)
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
dv/dt
Maximum Forward
IF =8A @ TJ =125 C
Voltage (Note 1)
IF =8A @ TJ =25 C
VF
IF =16A @ TJ =25 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C IR
@TJ =125 C
35
40
45
24.5
28
31.5
35
40
45
8
150
10000
0.57
0.70
0.84
0.1
15
50
60
V
35
42
V
50
60
V
A
A
V/us
0.70
V
0.80
0.95
V
mA
mA
Typical Junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R0JC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
250
3.0
-55 to +150
-55 to +175
pF
C/W
C
C
REV. 0, 04-Mar-2002, KTHA05
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