LITE-ON
SEMICONDUCTOR
SCHOTTKY BARRIER RECTIFIERS
MBR830 thru MBR860
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 8.0 Amperes
FEATURES
TO-220AC
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
B
L
C
D
TO-220AC
M
DIM.
MIN. MAX.
A
14.22 15.88
High surge capacity
K
A
B
9.65 10.67
Plastic package has UL flammability classification 94V-0
E
C
2.54 3.43
PIN
D
5.84 6.86
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Y Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
R Mounting position : Any
1
2
F
I
H
G
J
N
PIN 1
PIN 2
CASE
E
8.26 9.28
F
-
6.35
G
12.70 14.73
H
4.83 5.33
I
0.51 1.14
J
0.30 0.64
K
3.53 4.09
L
3.56 4.83
M
1.14 1.40
N
2.03 2.92
All Dimensions in millimeter
INA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
IM CHARACTERISTICS
SYMBOL MBR830 MBR835 MBR840 MBR845 MBR850 MBR860 UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
30
L Maximum RMS Voltage
VRMS
21
Maximum DC Blocking Voltage
VDC
30
Maximum Average Forward Rectified Current
E at TC=125 C (See Fig.1)
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
superimposed on rated load (JEDEC METHOD)
R Voltage Rate of Change (Rated VR)
dv/dt
P Maximum Forward
IF =8A @ TJ =125 C
35
24.5
35
40
45
28
31.5
40
45
8
150
10000
0.57
50
60
V
35
42
V
50
60
V
A
A
V/us
0.70
V
Voltage (Note 1)
IF =8A @ TJ =25 C
VF
IF =16A @ TJ =25 C
0.70
0.84
0.80
0.95
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C IR
@TJ =125 C
0.1
mA
15
mA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
CJ
R0JC
250
pF
3.0
C/W
Operating Temperature Range
TJ
-55 to +150
C
Storage Temperature Range
TSTG
-55 to +175
C
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
REV. 2-PRE, 13-Sep-2001, KTHA05