M25P80-VMW3 데이터 시트보기 (PDF) - STMicroelectronics

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M25P80-VMW3

8 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

STMicroelectronics 

M25P80

Release from Deep Power-down and Read

Electronic Signature (RES)

Once the device has entered the Deep Power-

down mode, all instructions are ignored except the

Release from Deep Power-down and Read Elec-

tronic Signature (RES) instruction. Executing this

instruction takes the device out of the Deep Pow-

er-down mode.

The instruction can also be used to read, on Serial

Data Output (Q), the 8-bit Electronic Signature,

whose value for the M25P80 is 13h.

Except while an Erase, Program or Write Status

Register cycle is in progress, the Release from

Deep Power-down and Read Electronic Signature

(RES) instruction always provides access to the 8-

bit Electronic Signature of the device, and can be

applied even if the Deep Power-down mode has

not been entered.

Any Release from Deep Power-down and Read

Electronic Signature (RES) instruction while an

Erase, Program or Write Status Register cycle is in

progress, is not decoded, and has no effect on the

cycle that is in progress.

The device is first selected by driving Chip Select

(S) Low. The instruction code is followed by 3

dummy bytes, each bit being latched-in on Serial

Data Input (D) during the rising edge of Serial

Clock (C). Then, the 8-bit Electronic Signature,

stored in the memory, is shifted out on Serial Data

Output (Q), each bit being shifted out during the

falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 19..

The Release from Deep Power-down and Read

Electronic Signature (RES) instruction is terminat-

ed by driving Chip Select (S) High after the Elec-

tronic Signature has been read at least once.

Sending additional clock cycles on Serial Clock

(C), while Chip Select (S) is driven Low, cause the

Electronic Signature to be output repeatedly.

When Chip Select (S) is driven High, the device is

put in the Stand-by Power mode. If the device was

not previously in the Deep Power-down mode, the

transition to the Stand-by Power mode is immedi-

ate. If the device was previously in the Deep Pow-

er-down mode, though, the transition to the Stand-

by Power mode is delayed by tRES2, and Chip Se-

lect (S) must remain High for at least tRES2(max),

as specified in Table 17.. Once in the Stand-by

Power mode, the device waits to be selected, so

that it can receive, decode and execute instruc-

tions.

Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) Instruction

Sequence and Data-Out Sequence

S

0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38

C

Instruction

3 Dummy Bytes

tRES2

D

23 22 21

3210

MSB

High Impedance

Q

Electronic Signature Out

76543210

MSB

Deep Power-down Mode

Note: The value of the 8-bit Electronic Signature, for the M25P80, is 13h.

Stand-by Mode

AI04047C

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