AM27C512-70PI 데이터 시트보기 (PDF) - Advanced Micro Devices
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AM27C512-70PI Datasheet PDF : 12 Pages
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mon connection to all devices in the array and
connected to the READ line from the system control
bus. This assures that all deselected memory devices
are in their low-power standby mode and that the out-
put pins are only active when data is desired from a
particular memory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
between VCC and VSS for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Mode
Read
Output Disable
Standby (TTL)
Standby (CMOS)
Program
Program Verify
Program Inhibit
Autoselect
(Note 3)
Manufacturer Code
Device Code
CE#
OE#/VPP
A0
VIL
VIL
X
X
VIH
X
VIH
X
X
VCC ± 0.3 V
X
X
VIL
VPP
X
VIL
VIL
X
VIH
VPP
X
VIL
VIL
VIL
VIL
VIL
VIH
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–15 = VIL
4. See DC Programming Characteristics for VPP voltage during programming.
A9
Outputs
X
DOUT
X
High Z
X
High Z
X
High Z
X
DIN
X
DOUT
X
High Z
VH
01h
VH
91h
6
Am27C512
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