IS42S16100-7TI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS42S16100-7TI

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution 

IS42S16100

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VCC MAX

VCCQ MAX

VIN

VOUT

PD MAX

ICS

TOPR

Parameters

Maximum Supply Voltage

Maximum Supply Voltage for Output Buffer

Input Voltage

Output Voltage

Allowable Power Dissipation

Output Shorted Current

Operating Temperature

TSTG

Storage Temperature

ISSI ®

Com

Ind.

Rating Unit

–1.0 to +4.6 V

–1.0 to +4.6 V

–1.0 to +4.6 V

–1.0 to +4.6 V

1

W

50

mA

0 to +70 °C

-40 to +85 °C

–55 to +150 °C

DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)

Symbol

VCC, VCCQ

VIH

VIL

Parameter

Supply Voltage

Input High Voltage(3)

Input Low Voltage(4)

Min.

3.0

2.0

-0.3

Typ.

Max.

Unit

3.3

3.6

V

—

VDD + 0.3

V

—

+0.8

V

CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)

Symbol Parameter

Typ. Max. Unit

CIN1

Input Capacitance: A0-A11

—

4

pF

CIN2

Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) —

4

pF

CI/O

Data Input/Output Capacitance: I/O0-I/O15

—

5

pF

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. All voltages are referenced to GND.

3. VIH (max) = VCCQ + 2.0V with a pulse width ≤ 3 ns.

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

11/01/01

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