MT55L256V36PB-6 데이터 시트보기 (PDF) - Micron Technology

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MT55L256V36PB-6

8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM

Micron Technology 

GENERAL DESCRIPTION

The Micron® Zero Bus Turnaround™ (ZBT®) SRAM

family employs high-speed, low-power CMOS designs

using an advanced CMOS process.

Micron’s 8Mb ZBT SRAMs integrate a 512K x 18,

256K x 32, or 256K x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst

counter. These SRAMs are optimized for 100 percent

bus utilization, eliminating any turnaround cycles for

READ to WRITE, or WRITE to READ, transitions. All

synchronous inputs pass through registers controlled

by a positive-edge-triggered single clock input (CLK).

The synchronous inputs include all addresses, all data

inputs, chip enable (CE#), two additional chip enables

for easy depth expansion (CE2, CE2#), cycle start input

(ADV/LD#), synchronous clock enable (CKE#), byte

write enables (BWa#, BWb#, BWc#, and BWd#), and

read/write (R/W#).

Asynchronous inputs include the output enable

(OE#, which may be tied LOW for control signal mini-

mization), clock (CLK), and snooze enable (ZZ, which

may be tied LOW if unused). There is also a burst mode

pin (MODE) that selects between interleaved and linear

burst modes. MODE may be tied HIGH, LOW, or left

unconnected if burst is unused. The data-out (Q),

enabled by OE#, is registered by the rising edge of CLK.

WRITE cycles can be from one to four bytes wide as

controlled by the write control inputs.

All READ, WRITE, and DESELECT cycles are initi-

ated by the ADV/LD# input. Subsequent burst

8Mb: 512K x 18, 256K x 32/36

PIPELINED ZBT SRAM

addresses can be internally generated as controlled by

the burst advance pin (ADV/LD#). Use of burst mode

is optional. It is allowable to give an address for each

individual READ and WRITE cycle. BURST cycles wrap

around after the fourth access from a base address.

To allow for continuous, 100 percent use of the data

bus, the pipelined ZBT SRAM uses a LATE LATE WRITE

cycle. For example, if a WRITE cycle begins in clock cycle

one, the address is present on rising edge one. BYTE

WRITEs need to be asserted on the same cycle as the

address. The data associated with the address is required

two cycles later, or on the rising edge of clock cycle three.

Address and write control are registered on-chip to

simplify WRITE cycles. This allows self-timed WRITE

cycles. Individual byte enables allow individual bytes to

be written. During a BYTE WRITE cycle, BWa# controls

DQa pins; BWb# controls DQb pins; BWc# controls

DQc pins; and BWd# controls DQd pins. Cycle types

can only be defined when an address is loaded, i.e.,

when ADV/LD# is LOW. Parity/ECC bits are only

available on the x36 version.

Micron’s 8Mb ZBT SRAMs operate from a +3.3V VDD

power supply, and all inputs and outputs are LVTTL-

compatible. Users can choose either a 2.5V or 3.3V I/O

version. The device is ideally suited for systems requir-

ing high bandwidth and zero bus turnaround delays.

Please refer to Micron’s Web site (www.micron.com/

datasheets) for the latest data sheet.

8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM

MT55L512L18P_2.p65 – Rev. 6/01

3

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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