IS61VPD51232 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61VPD51232

512K x 32, 512K x 36, 1024K x 18 SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

Integrated Silicon Solution 

IS61VPD51232 IS61VPD51236 IS61VPD10018

OPERATING RANGE

Range

Commercial

Ambient Temperature

0°C to +70°C

Industrial

–40°C to +85°C

VCC

2.375–2.625V

2.375–2.625V

VCCQ

2.375–2.625V

2.375–2.625V

ISSI ®

DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage

ILI

Input Leakage Current

ILO

Output Leakage Current

Test Conditions

IOH = –2.0 mA, VCCQ = 2.5V

IOL = 2.0 mA, VCCQ = 2.5V

VCCQ = 2.5V

VCCQ = 2.5V

GND ≤ VIN ≤ VCCQ(2)

Com.

Ind.

GND ≤ VOUT ≤ VCCQ, OE = VIH Com.

Ind.

Min.

1.7

—

1.7

–0.3

–2

–5

–2

–5

Max.

—

0.7

VCCQ + 0.3

0.7

2

5

2

5

Unit

V

V

V

V

µA

µA

POWER SUPPLY CHARACTERISTICS (Over Operating Range)

Symbol

Parameter

Test Conditions

-200

Max.

-166

Max.

ICC

AC Operating

Device Selected,

Com.

Supply Current

All Inputs = VIL or VIH

Ind.

OE = VIH, Vcc = Max.

Cycle Time ≥ tKC min.

ISB

Standby Current Device Deselected,

Com.

VCC = Max.,

Ind.

All Inputs = VIH or VIL

CLK Cycle Time ≥ tKC min.

300

275

325

300

70

60

80

70

Notes:

1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to VCC.

2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current when tied to - GND + 0.2V

or ≥ Vcc – 0.2V.

Unit

mA

mA

mA

mA

Integrated Silicon Solution, Inc. — 1-800-379-4774

9

ADVANCE INFORMATION Rev. 00B

09/25/01

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