MT28F400B5VG-6TET 데이터 시트보기 (PDF) - Micron Technology
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MT28F400B5VG-6TET Datasheet PDF : 32 Pages
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4Mb
SMART 5 BOOT BLOCK FLASH MEMORY
TRUTH TABLE (MT28F004B5)1
FUNCTION
RP# CE# OE# WE# WP# A0
Standby
H
H
X
X
X
X
RESET
L
X
X
X
X
X
READ
READ
H
L
L
H
X
X
Output Disable
H
L
H
H
X
X
WRITE/ERASE (EXCEPT BOOT BLOCK)2
ERASE SETUP
ERASE CONFIRM3
H
L
H
L
X
X
H
L
H
L
X
X
WRITE SETUP
H
L
H
L
X
X
WRITE4
H
L
H
L
X
X
READ ARRAY5
H
L
H
L
X
X
WRITE/ERASE (BOOT BLOCK)2, 7
ERASE SETUP
ERASE CONFIRM3
ERASE CONFIRM3, 6
H
L
H
L
X
X
VHH
L
H
L
X
X
H
L
H
L
H
X
WRITE SETUP
WRITE4
WRITE4, 6
H
L
H
L
X
X
VHH
L
H
L
X
X
H
L
H
L
H
X
READ ARRAY5
H
L
H
L
X
X
DEVICE IDENTIFICATION8, 9
Manufacturer Compatibility
H
L
L
H
X
L
Device (top boot)
H
L
L
H
X
H
Device (bottom boot)
H
L
L
H
X
H
A9 VPP DQ0-DQ7
X
X
High-Z
X
X
High-Z
X
X Data-Out
X
X
High-Z
X
X
20H
X
VPPH
D0H
X
X
10H/40H
X VPPH Data-In
X
X
FFH
X
X
20H
X
VPPH
D0H
X
VPPH
D0H
X
X
10H/40H
X VPPH Data-In
X VPPH Data-In
X
X
FFH
VID
X
VID
X
VID
X
89H
78H
79H
NOTE: 1. L = VIL, H = VIH, X = VIL or VIH.
2. VPPH = VPPH1 = 5V.
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = VIH, RP# may be at VIH or VHH.
7. VHH = 12V.
8. VID = 12V; may also be read by issuing the IDENTIFY DEVICE command.
9. A1-A8, A10-A18 = VIL.
4Mb Smart 5 Boot Block Flash Memory
F44_B.p65 – Rev. 7/02
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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