M28W320CT09GB1T 데이터 시트보기 (PDF) - STMicroelectronics

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M28W320CT09GB1T

32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory

STMicroelectronics 

M28W320CT

M28W320CB

32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory

PRELIMINARY DATA

s SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V: for Program, Erase and

Read

– VDDQ = 1.65V or 2.7V: Input/Output option

– VPP = 12V: optional Supply Voltage for fast

Program

s ACCESS TIME

– 2.7V to 3.6V: 90ns

– 2.7V to 3.6V: 100ns

s PROGRAMMING TIME:

– 10µs typical

– Double Word Programming Option

s PROGRAM/ERASE CONTROLLER (P/E.C.)

s COMMON FLASH INTERFACE

s MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

s BLOCK PROTECTION UNPROTECTION

– All Blocks protected at Power Up

– Any combination of blocks can be protected

– WP for block locking

s SECURITY

– 64-bit user Programmable OTP cells

– 64-bit unique device identifier

– One Parameter Block Permanently Lockable

s AUTOMATIC STAND-BY MODE

s PROGRAM and ERASE SUSPEND

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s 20 YEARS of DATA RETENTION

– Defectivity below 1ppm/year

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W320CT: 88BAh

– Bottom Device Code, M28W320CB: 88BBh

TSOP48 (N)

12 x 20mm

µBGA

µBGA47 (GB)

8 x 6 solder balls

Figure 1. Logic Diagram

VDD VDDQ VPP

21

A0-A20

16

DQ0-DQ15

W

E

M28W320CT

G

M28W320CB

RP

WP

VSS

AI03521

May 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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