EDD5104ABTA 데이터 시트보기 (PDF) - Elpida Memory, Inc

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EDD5104ABTA

512M bits DDR SDRAM

Elpida Memory, Inc 

EDD5104ABTA, EDD5108ABTA

DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)

max.

Parameter

Symbol Grade

×4

×8

Unit Test condition

Notes

Operating current (ACT-PRE) IDD0

-6B

150

-7A, -7B

135

150

135

mA

CKE ≥ VIH,

tRC = tRC (min.)

1, 2, 9

Operating current

(ACT-READ-PRE)

IDD1

-6B

170

-7A, -7B

155

180

160

CKE ≥ VIH, BL = 4,

mA CL = 2.5,

1, 2, 5

tRC = tRC (min.)

Idle power down standby

current

IDD2P

3

3

mA CKE ≤ VIL

4

Floating idle standby current IDD2F

-6B

-7A, -7B

40

35

40

35

mA

CKE ≥ VIH, /CS ≥ VIH,

DQ, DQS, DM = VREF

4, 5

Quiet idle standby current IDD2Q

25

25

mA

CKE ≥ VIH, /CS ≥ VIH,

DQ, DQS, DM = VREF

4, 10

Active power down standby

current

IDD3P

20

20

mA CKE ≤ VIL

3

Active standby current

IDD3N

-6B

-7A, -7B

70

60

70

60

mA

CKE ≥ VIH, /CS ≥ VIH

tRAS = tRAS (max.)

3, 5, 6

Operating current

(Burst read operation)

IDD4R

-6B

-7A, -7B

200

170

210

180

mA

CKE ≥ VIH, BL = 2,

CL = 2.5

1, 2, 5,

6

Operating current

(Burst write operation)

IDD4W

-6B

-7A, -7B

200

170

210

180

mA

CKE ≥ VIH, BL = 2,

CL = 2.5

1, 2, 5,

6

Auto Refresh current

IDD5

-6B

290

-7A, -7B

270

290

270

mA

tRFC = tRFC (min.),

Input ≤ VIL or ≥ VIH

Self refresh current

IDD6

4

4

mA

Input ≥ VDD – 0.2 V

Input ≤ 0.2 V

Operating current

(4 banks interleaving)

IDD7A

-6B

-7A, -7B

420

360

430

370

mA BL = 4

5, 6, 7

Notes: 1. These IDD data are measured under condition that DQ pins are not connected.

2. One bank operation.

3. One bank active.

4. All banks idle.

5. Command/Address transition once per one clock cycle.

6. DQ, DM and DQS transition twice per one clock cycle.

7. 4 banks active. Only one bank is running at tRC = tRC (min.)

8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.

9. Command/Address transition once every two clock cycles.

10. Command/Address stable at ≥ VIH or ≤ VIL.

DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)

Parameter

Input leakage current

Output leakage current

Output high current

Output low current

Symbol

IL

IOZ

IOH

IOL

min.

–2

–5

–15.2

15.2

max.

2

5

—

—

Unit

Test condition

µA

VDD ≥ VIN ≥ VSS

µA

VDDQ ≥ VOUT ≥ VSS

mA

VOUT = 1.95V

mA

VOUT = 0.35V

Notes

Preliminary Data Sheet E0237E30 (Ver. 3.0)

5

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