M28W640 데이터 시트보기 (PDF) - STMicroelectronics

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M28W640

64 Mbit (4Mb x16, Boot Block)3V Supply Flash Memory

STMicroelectronics 

M28W640CT, M28W640CB

Table 3. Commands

Bus Write Operations

Commands

1st Cycle

2nd Cycle

3rd Cycle

4th Cycle

5th Cycle

Op. Add Data Op. Add Data Op. Add Data Op. Add Data Op. Add Data

Read Memory

Array

1+ Write X FFh Read RA RD

Read Status

Register

1+ Write X 70h Read X SRD

Read Electronic

Signature

1+ Write X 90h Read SA(2) IDh

Read CFI Query 1+ Write X 98h Read QA QD

Erase

2 Write X 20h Write BA D0h

Program

40h

2 Write X or Write PA PD

10h

Double Word

Program(3)

3 Write X 30h Write PA1 PD1 Write PA2 PD2

Quadruple Word

Program(4)

5 Write X 55h Write PA1 PD1 Write PA2 PD2 Write PA3 PD3 Write PA4 PD4

Clear Status

Register

1 Write X 50h

Program/Erase

Suspend

1 Write X B0h

Program/Erase

Resume

1 Write X D0h

Block Lock

2 Write X 60h Write BA 01h

Block Unlock

2 Write X 60h Write BA D0h

Block Lock-Down 2 Write X 60h Write BA 2Fh

Protection Register

Program

2 Write

X

C0h Write PRA PRD

Note: 1. X = Don't Care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ID=Identifier (Manufacture and Device Code),

QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program Data, PRA=Protection Register Ad-

dress, PRD=Protection Register Data.

2. The signature addresses are listed in Tables 4, 5 and 6.

3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.

4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.

Table 4. Read Electronic Signature

Code

Device

E G W A0 A1 A2-A7 A8-A21 DQ0-DQ7 DQ8-DQ15

Manufacture.

Code

VIL VIL VIH VIL VIL

0

Don't Care

20h

00h

M28W640CT VIL VIL VIH VIH VIL

0

Don't Care

48h

88h

Device Code

M28W640CB VIL VIL VIH VIH VIL

0

Don't Care

49h

88h

Note: RP = VIH.

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