HP3103 데이터 시트보기 (PDF) - Fairchild Semiconductor
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HP3103 Datasheet PDF : 7 Pages
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Data Sheet
HPLR3103, HPLU3103
December 2001
52A, 30V, 0.019 Ohm, N-Channel Logic
Level, Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HPLU3103
TO-251AA
HP3103
HPLR3103
TO-252AA
HP3103
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-252AA variant in tape and reel, e.g., HPLR3103T.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 52A†, 30V
• Low On-Resistance, rDS(ON) = 0.019Ω
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
† Calculated continuous current based on maximum allowable junction
temperature. Package limited to 20A continuous, see Figure 9.
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
©2001 Fairchild Semiconductor Corporation
HPLR3103, HPLU3103 Rev. B
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