M29F800DT70M6E 데이터 시트보기 (PDF) - STMicroelectronics

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M29F800DT70M6E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

STMicroelectronics 

M29F800DT

M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

5V Supply Flash Memory

Feature summary

■ Supply voltage

– VCC = 5V ±10% for Program, Erase and

Read

■ Access time: 55, 70, 90ns

■ Programming time

– 10µs per Byte/Word typical

■ 19 Memory Blocks

– 1 Boot Block (Top or Bottom location)

– 2 Parameter and 16 Main Blocks

■ Program/Erase controller

– Embedded Byte/Word Program algorithms

■ Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

■ Unlock Bypass Program command

– Faster Production/batch Programming

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64 bit Security Code

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per Block

■ Electronic Signature

– Manufacturer Code: 0020h

– Top Device Code M29F800DT: 22ECh

– Bottom Device Code M29F800DB: 2258h

SO44 (M)

TSOP48 (N)

12 x 20mm

August 2006

Rev 5

1/53

www.st.com

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