M29W160EB 데이터 시트보기 (PDF) - STMicroelectronics

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M29W160EB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29W160ET

M29W160EB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase

and Read

■ ACCESS TIMES: 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program

algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160ET: 22C4h

– Bottom Device Code M29W160EB: 2249h

Figure 1. Packages

TSOP48 (N)

12 x 20mm

FBGA

TFBGA48 (ZA)

6 x 8mm

January 2004

1/40

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