M29W160EB 데이터 시트보기 (PDF) - STMicroelectronics
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M29W160EB Datasheet PDF : 40 Pages
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M29W160ET, M29W160EB
Table 23. CFI Query System Interface Information
Address
x16
x8
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
36h
0027h
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
38h
0036h
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
1Dh
3Ah
0000h VPP [Programming] Supply Minimum Program/Erase voltage
1Eh
3Ch
0000h VPP [Programming] Supply Maximum Program/Erase voltage
1Fh
3Eh
0004h Typical timeout per single Byte/Word program = 2n µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
21h
42h
000Ah Typical timeout per individual block erase = 2n ms
22h
44h
0000h Typical timeout for full chip erase = 2n ms
23h
46h
0004h Maximum timeout for Byte/Word program = 2n times typical
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
25h
4Ah
0003h Maximum timeout per individual block erase = 2n times typical
26h
4Ch
0000h Maximum timeout for chip erase = 2n times typical
Value
2.7V
3.6V
NA
NA
16µs
NA
1s
NA
256µs
NA
8s
NA
31/40
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