M29W160EB 데이터 시트보기 (PDF) - STMicroelectronics
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M29W160EB Datasheet PDF : 40 Pages
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M29W160ET, M29W160EB
Table 24. Device Geometry Definition
Address
x16
x8
Data
Description
27h
4Eh
0015h Device Size = 2n in number of Bytes
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of Bytes in multi-Byte program or page = 2n
Number of Erase Block Regions within the device.
2Ch
58h
0004h It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
2Dh
5Ah
0000h Region 1 Information
2Eh
5Ch
0000h Number of identical size erase block = 0000h+1
2Fh
5Eh
0040h Region 1 Information
30h
60h
0000h Block size in Region 1 = 0040h * 256 Byte
31h
62h
0001h Region 2 Information
32h
64h
0000h Number of identical size erase block = 0001h+1
33h
66h
0020h Region 2 Information
34h
68h
0000h Block size in Region 2 = 0020h * 256 Byte
35h
6Ah
0000h Region 3 Information
36h
6Ch
0000h Number of identical size erase block = 0000h+1
37h
6Eh
0080h Region 3 Information
38h
70h
0000h Block size in Region 3 = 0080h * 256 Byte
39h
72h
001Eh Region 4 Information
3Ah
74h
0000h Number of identical-size erase block = 001Eh+1
3Bh
76h
0000h Region 4 Information
3Ch
78h
0001h Block size in Region 4 = 0100h * 256 Byte
Value
2 MByte
x8, x16
Async.
NA
4
1
16 KByte
2
8 KByte
1
32 KByte
31
64 KByte
32/40
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