M29W320DB 데이터 시트보기 (PDF) - Numonyx -> Micron
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M29W320DB
Numonyx -> Micron
M29W320DB Datasheet PDF : 56 Pages
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M29W320DT
M29W320DB
32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks,
Boot Block), 3V Supply Flash memory
Feature summary
Supply Voltage
– VCC = 2.7V to 3.6V for Program, Erase and
Read
– VPP =12V for Fast Program (optional)
Access time: 70, 80, and 90 ns
Programming time
– 10µs per Byte/Word typical
67 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 64 Main Blocks
Program/Erase controller
– Embedded Byte/Word Program algorithms
Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
VPP/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security code
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Top Device Code M29W320DT: 22CAh
– Bottom Device Code M29W320DB: 22CBh
RoHS packages available
Automotive Grade Parts Available
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
February 2010
Rev 12
1/56
www.numonyx.com
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