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2N4427 데이터 시트보기 (PDF) - Philips Electronics

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2N4427 Datasheet PDF : 9 Pages
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Philips Semiconductors
Silicon planar epitaxial
overlay transistors
Product specification
2N3866; 2N4427
DESCRIPTION
NPN overlay transistors in TO-39 metal packages with the
collector connected to the case. The devices are primarily
intended for class-A, B or C amplifiers, frequency multiplier
and oscillator circuits.
APPLICATIONS
The transistors are intended for use in output, driver or
pre-driver stages in VHF and UHF equipment.
PINNING - TO-39/1
PIN
DESCRIPTION
1
emitter
2
base
3
collector
handbook, halfpage
1
2
MBB199
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
VCER
VCEO
VEBO
IC
IC(AV)
PARAMETER
collector-emitter voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
emitter-base voltage
2N3866
2N4427
collector current (DC)
average collector current
Ptot
total power dissipation
fT
transition frequency
Tj
junction temperature
RF performance
TYPE NUMBER
2N3866
2N4427
f
(MHz)
400
175
CONDITIONS
RBE = 10
open base
open collector
measured over any 20 ms
period
up to Tmb = 25 °C
IC = 50 mA; VCE = 15 V;
f = 200 MHz
VCE
Po
(V)
(W)
28
1
12
1
MIN.
MAX.
UNIT
55
V
40
V
30
V
20
V
3.5
V
2.0
V
0.4
A
0.4
A
3.5
500
W
MHz
200
°C
Gp
η
(dB)
(%)
>10
>45
>10
>50
1995 Oct 27
2

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