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DSF11060SG55 데이터 시트보기 (PDF) - Dynex Semiconductor
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DSF11060SG55
Fast Recovery Diode
Dynex Semiconductor
DSF11060SG55 Datasheet PDF : 6 Pages
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DSF11060SG
CURVES
10000
1000
I
F
50µs
Q
S
=
0
t
p
= 1ms
dI
R
/dt
QS
I
RR
Conditions:
T
j
= 125˚C,
V
R
= 100V
A
B
C
D
E
1000
Conditions:
T
j
= 125
˚
C,
V
R
= 100V
100
A
B
C
D
E
100
1
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
E: I
F
= 100A
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.2 Recovered charge
0.100
d.c. Double side cooled
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
10
E: I
F
= 100A
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/µs)
Fig.3 Typical reverse recovery current vs rate of rise of
forward current
0.010
0.001
0.01
0.1
1
10
100
Time - (s)
Fig.4 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
4/6
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