IXFH22N55 데이터 시트보기 (PDF) - IXYS CORPORATION
부품명
상세내역
제조사
IXFH22N55 Datasheet PDF : 4 Pages
| |||
IXFH 22N55
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
11 18
S
4200
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
450
pF
135
pF
VGS = 10 V, VDS = 0.5 • VDSS,
ID = 0.5 • ID25, RG = 2 W (External)
20 40 ns
43 60 ns
70 90 ns
40 60 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
150 170 nC
29 40 nC
60 85 nC
0.42 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
IF = IS, -di/dt = 100 A/ms, VR = 100 V
T
J
=
125°C
22 A
88 A
1.5 V
250 ns
400 ns
TO-247 AD Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
Share Link: 