EL2008CT 데이터 시트보기 (PDF) - Elantec -> Intersil

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EL2008CT

55 MHz 1 Amp Buffer Amplifier

Elantec -> Intersil 

EL2008C

55 MHz 1 Amp Buffer Amplifier

Burn-In Circuit

Applications Information

The EL2008C is a monolithic buffer amplifier built on

Elantec's proprietary dielectric isolation process that

produces NPN and PNP transistors with essentially

identical DC and AC characteristics. The EL2008C

takes full advantage of the complementary process with

a unique circuit topology.

Elantec has applied for two patents based on the

EL2008C's topology. The patents relate to the base drive

and feedback mechanism in the buffer. This feedback

makes 3000 V/µs slew rates with 10Ω load possible with

modest supply current.

Power Supplies

The EL2008C may be operated with single or split sup-

plies with total voltage difference between 10V (±5V)

and 36V (±18V). However, bandwidth, slew rate and

output impedance are affected by total supply voltages

below 20V (±10V) as shown by the characteristic

curves. It is not necessary to use equal split value sup-

plies. For example -5V and +12V would be excellent for

signals from -2V to +9V.

Bypass capacitors from each supply pin to ground are

highly recommended to reduce supply ringing and the

interference it can cause. At a minimum a 10 µF tanta-

lum capacitor in parallel with a 0.1 µF capacitor with

short leads should be used for both supplies.

Input Characteristics

The input to the EL2008C looks like a resistance in par-

allel with about 25 pF in addition to a DC bias current.

The DC bias current is due to the mismatch in beta and

collector current between the NPN and PNP transistors

connected to the input pin. The bias current can be either

positive or negative. The change in input current with

input voltage (RIN) is affected by the output load, beta

and the internal boost. RIN can actually appear negative

over portions of the input range in some units. A few

typical input current (IIN) curves are shown in the char-

acteristic curves.

Internal clamp diodes from the input to the output are

provided. These diodes protect the transistor base emit-

ter junctions and limit the boost current during slew to

avoid saturation of internal transistors. The diodes begin

conduction at about ±2.5V input to output differential.

When that happens the input resistance drops dramati-

cally. The diodes are rated at 50 mA. When conducting

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