M40Z300MQ1TR(2000) 데이터 시트보기 (PDF) - STMicroelectronics

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M40Z300MQ1TR
(Rev.:2000)

NVRAM CONTROLLER for up to EIGHT LPSRAM

STMicroelectronics 

M40Z300, M40Z300W

Table 6B. DC Characteristics for M40Z300W

(TA = 0 to 70°C; VCC = 3V to 3.6V or 2.7V to 3.3V)

Symbol

Parameter

Test Condition

Min Typ

Max

ILI (1) Input Leakage Current

0V ≤ VIN ≤ VCC

±1

ICC

Supply Current

Outputs open

2

4

VIL

Input Low Voltage

–0.3

0.8

VIH

Input High Voltage

2.0

VCC + 0.3

Output Low Voltage

IOL = 4.0mA

0.4

VOL

Output Low Voltage (open drain) (2)

IOL = 10mA

0.4

VOH Output High Voltage

IOH = –2.0mA

2.4

VOHB VOH Battery Back-up (3)

IOUT2 = –1.0µA

2.0

2.9

3.6

VOUT > VCC –0.3

150

IOUT1 VOUT Current (Active)

VOUT > VCC –0.2

100

IOUT2 VOUT Current (Battery Back-up)

VOUT > VBAT –0.3

100

ICCDR Data Retention Mode Current (4)

100

THS Threshold Select Voltage

VSS

VOUT

VPFD

Power-fail Deselect Voltage (THS = VSS)

Power-fail Deselect Voltage (THS = VOUT)

2.8

2.9

3.0

2.5

2.6

2.7

VSO Battery Back-up Switchover Voltage

2.5

Note: 1. Outputs deselected.

2. For RST & BL pins (Open Drain).

3. Chip Enable outputs (E1CON - E4CON) can only sustain CMOS leakage currents in the battery back-up mode.

Higher leakage currents will reduce battery life.

4. Measured with VOUT and E1CON - E4CON open.

Unit

µA

mA

V

V

V

V

V

V

mA

mA

µA

nA

V

V

V

V

7/16

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