M48T36 데이터 시트보기 (PDF) - STMicroelectronics

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M48T36

CMOS 32K x 8 TIMEKEEPER SRAM

STMicroelectronics 

M48T36

Table 6. Power Down/Up Trip Points DC Characteristics (1) (TA = 0 to 70°C)

Symbol

Parameter

Min

Typ

Max

Unit

VPFD Power-fail Deselect Voltage (M48T36Y)

4.2

4.35

4.5

V

VSO

Battery Back-up Switchover Voltage

tDR(2)

Expected Data Retention Time

Notes: 1. All voltages referenced to VSS.

2. @ 25°C

3.0

7

V

YEARS

Table 7. Power Down/Up Mode AC Characteristics (TA = 0 to 70°C)

Symbol

Parameter

Min

Max

Unit

tPD

tF (1)

tFB (2)

E or W at VIH before Power Down

VPFD (max) to VPFD (min) VCC Fall Time

VPFD (min) to VSO VCC Fall Time

0

µs

300

µs

10

µs

tR

VPFD(min) to VPFD (max) VCC Rise Time

10

µs

tRB

VSO to VPFD (min) VCC Rise Time

1

µs

tREC

VPFD (max) to RST High

40

200

ms

Notes: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after

VCC passes VPFD (min).

2. VPFD (min) to VSO fall time of less than tFB may cause corruption of RAM data.

Figure 5. Power Down/Up Mode AC Waveforms

VCC

VPFD (max)

VPFD (min)

VSO

tF

tPD

tFB

tDR

tRB

RST

INPUTS

RECOGNIZED

OUTPUTS

VALID

(PER CONTROL INPUT)

DON’T CARE

HIGH-Z

tR

tREC

RECOGNIZED

VALID

(PER CONTROL INPUT)

AI01384C

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