MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
VI
IC
IF
VR
Pd
Topr
Tstg
Parameter
Supply voltage
Collector-emitter voltage
Input voltage
Collector current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
10
V
–0.5 ~ +50
V
–0.5 ~ VCC
V
500
mA
500
mA
50
V
1.79/1.1
W
–20 ~ +75
°C
–55 ~ +125
°C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
IC
VIH
VIL
Parameter
Supply voltage
Collector current
Per channel
“H” input voltage
VCC = 5V, Duty Cycle
P : no more than 6%
FP : no more than 5%
VCC = 5V, Duty Cycle
P : no more than 34%
FP : no more than 15%
“L” input voltage
Limits
min
typ
max
Unit
4
5
8V
0
—
400
mA
0
—
200
VCC–0.7 —
VCC
V
0
— VCC–3.6 V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Test conditions
Limits
min
typ✽
max
Unit
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA
50
—
—
V
VCE(sat) Collector-emitter saturation voltage VI = VCC–3.6V
IC = 400mA
IC = 200mA
—
1.2 2.4
V
—
0.95 1.6
II
Input current
VI = VCC–3.6V
—
–290 –600
µA
VF
Clamping diode forward volltage IF = 400mA
—
1.4 2.4
V
IR
Clamping diode reverse current VR = 50V
—
0.1 100
µA
ICC
Supply current (AN only Input) VCC = 5V, VI = VCC–3.5V
—
1.9
3
mA
hFE
DC amplification factor
VCC = 5V, VCE = 4V, IC = 350mA, Ta = 25°C
2000
3500
—
—
✽ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained
under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
120
—
ns
—
2400
—
ns
Mar.2002