M58BV016DB7T3F 데이터 시트보기 (PDF) - Micron Technology

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M58BV016DB7T3F

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Micron Technology 

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

Figure 3. LBGA connections (top view through package)

1

2

3

4

5

6

7

Description

8

A

A15

A14

VDD

VPP

VSS

A6

A3

A2

B

A16

A13

A12

A9

A8

A5

A4

A1

C

A17

A18

A11

A10

NC

A7

NC

A0

D

DQ3

DQ0

NC

NC

NC

DQ31

DQ30

DQ29

E

VDDQ

DQ4

DQ2

DQ1

DQ27

DQ28

DQ26

VDDQ

F

VSSQ

DQ7

DQ6

DQ5

NC

DQ25

DQ24

VSSQ

G

VDDQ

DQ8

DQ10

DQ9

DQ22

DQ21

DQ23

VDDQ

H

DQ13

DQ12

DQ11

WP

DQ17

DQ19

DQ18

DQ20

I

DQ15

DQ14

L

B

E

G

R

DQ16

J

VDDQIN

RP

K

VSS

VDD

W

GD

NC

AI04151C

1.1

Block protection

The M58BW016 feature two different levels of block protection.

Write protect pin, WP - When WP is Low, VIL, all the lockable parameter blocks (two

upper (top) or lower (bottom)) and all the main blocks are protected. When WP is High

(VIH) all the lockable parameter blocks and all the main blocks are unprotected

Reset/power-down pin, RP - If the device is held in reset mode (RP at VIL), no

program or erase operations can be performed on any block.

After a device reset the first two kinds of block protection (WP, RP) can be combined to give

a flexible block protection.

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