M5M5V416CWG 데이터 시트보기 (PDF) - Mitsumi

부품명

상세내역

제조사

M5M5V416CWG

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

Mitsumi 

2000.11.22 Ver. 1.0

MITSUBISHI LSIs

M5M5V416CWG -70HI

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

FUNCTION

The M5M5V416CWG is organized as 262144-words by

16-bit. These dev ices operate on a single +2.7~3.0V power

supply , and are directly TTL compatible to both input and

output. Its f ully static circuit needs no clocks and no

ref resh, and makes it usef ul.

The operation mode are determined by a combination of

the dev ice control inputs BC1 , BC2 , S1, S2 , W and OE.

Each mode is summarized in the f unction table.

A write operation is executed whenev er the low lev el W

ov erlaps with the low lev el BC1 and/or BC2 and the low

lev el S1 and the high lev el S2. The address(A0~A17) must

be set up bef ore the write cy cle and must be stable during

the entire cycle.

A read operation is executed by s etting W at a high lev el

and OE at a low lev el while BC1 and/or BC2 and S1 and

S2 are in an activ e state(S1=L,S2=H).

When setting BC1 at the high lev el and other pins are in

an activ e stage , upper-by t e are in a selectable mode in

which both reading and writing are enabled, and lower-byte

are in a non-selectable mode. And when setting BC2 at a

high lev el and other pins are in an activ e stage, lower-

BLOCK DIAGRAM

When setting BC1 and BC2 at a high lev el or S1 at a high

lev el or S2 at a low lev el, the chips are in a non-selectable

mode in which both reading and writing are disabled. In this

mode, the output stage is in a high-impedance state, allowing

OR-tie with other chips and memory expansion by BC1, BC2

and S1, S2.

The power supply c urrent is reduced as low as 0.1µA(25°C,

ty pical), and the memory data can be held at +1V power

supply , enabling battery back-up operation during power

FUNCTION TABLE

S1 S2 BC1 BC2 W OE Mode DQ1~8 DQ9~16 Icc

X L X X X X Non selection High-Z High-Z Standby

H H X X X X Non selection High-Z High-Z Standby

X X H H X X Non selection High-Z High-Z Standby

L H L H L X Write Din High-Z Activ e

L H L H H L Read Dout High-Z Activ e

LH L HH H

High-Z High-Z Activ e

L H H L L X Write High-Z Din Activ e

L H H L H L Read High-Z Dout Activ e

LH H L HH

High-Z High-Z Activ e

L H L L L X Write Din Din Activ e

L H L L H L Read Dout Dout Activ e

LH L L HH

High-Z High-Z Activ e

A0

DQ

1

A1

MEMORY ARRAY

DQ

8

262144 WORDS

x 16 BITS

A16

-

DQ

9

A17

S1

CLOCK

GENERATOR

DQ

16

S2

BC1

BC2

Vcc

W

GND

OE

MITSUBISHI ELECTRIC

2

Share Link: