M5M5V416BRT 데이터 시트보기 (PDF) - Renesas Electronics
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M5M5V416BRT Datasheet PDF : 10 Pages
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revision-P11, ' 03.01.14
M5M5V416BTP,RT
MITSUBISHI LSIs
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Vcc (PD) Power down supply voltage
VI (BC)
VI (S1)
VI (S2)
Byte control input BC1 & BC2
Chip select input S1
Chip select input S2
Icc (PD)
Power down
supply c urrent
Vcc=3.0V
<1>
S1
S2
>=>=
Vcc
Vcc
-
-
0.2V
0.2V
or
other inputs=0~3V
0.2V
<2>
S2 0.2V
other inputs=0~3V
<3>
BSC1 1<=0a.n2dVBoCr 2S>=2
Vcc-0.2V
>= Vcc-0.2V
other inputs=0~3V
(2) TIMING REQUIREMENTS
+85°C
+70°C
+40°C
0 ~ +25°C
-20 ~ +25°C
-40 ~ +25°C
Limits
Min Ty p Max
2.0
2.0
2.0
0.2
-
- 30
Units
V
V
V
V
µA
-
- 15 µA
-
1
3 µA
- 0.3 1 µA
- 0.3 1 µA
- 0.3 1 µA
Typical value is for Ta=25°C
Symbol
Parameter
tsu (PD) Power down set up time
trec (PD) Power down recov ery t ime
(3) TIMING DIAGRAM
Test conditions
Limits
Min Ty p Max
0
5
Units
ns
ms
S1 control mode
Vcc
Note7: On the S1 control mode, the lev el of S2 must be f ixed at S2 >= Vcc-0.2V or S2 0.2V.
tsu (PD)
2.7V
2.7V
trec (PD)
2.2V
S1
S2 control mode
Vcc
S1 >= Vcc - 0.2V
2.2V
S2
2.7V
tsu (PD)
2.7V
trec (PD)
0.2V
S2 0.2V
0.2V
BC control
Vcc
mode Note8: On the BC control mode,
the lev el of
S1 and S2 must be f ixed at S1 , S2 >= Vcc-0.2V or
S2
0.2V.
tsu (PD)
2.7V
2.7V
trec (PD)
BC1
2.2V
BC2
BC1 , BC2 >= Vcc - 0.2V
2.2V
8
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