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M5M5Y5636TG-20 데이터 시트보기 (PDF) - Renesas Electronics

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M5M5Y5636TG-20
Renesas
Renesas Electronics Renesas
M5M5Y5636TG-20 Datasheet PDF : 30 Pages
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MITSUBISHI LSIs
M5M5Y5636TG – 25,22,20
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
Write Operation
Double Late Write
Write operation occurs when the following conditions are satisfied at the rising edge of clock: All three chip enables (E1#, E2 and E3)
are active and the write enable input signal (W#) is asserted low.
Double Late Write means that Data In is required on the third rising edge of clock. It is designed to eliminate dead bus cycles when
turning the bus around between reads and writes, or writes and reads.
CLK
E1#
ADV
W#
BWx#
ADD
DQ
CQ
A
Read A
B
Write B
C
Q(A)
Read C
D
D(B)
E
Q(C)
F
D(D)
Write D
Read E
Read F
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Preliminary
M5M5Y5636TG REV.0.6

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