BCR5PM 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
부품명
상세내역
제조사
BCR5PM Datasheet PDF : 11 Pages
| |||
The product guaranteed maximum junction
temperature 150°C (See warning.)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
140
Tj = 150°C
120
100
III QUADRANT
80
60
40 I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
3
MAIN
2 VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
101
I QUADRANT
VD = 200V
f = 3Hz
7
III QUADRANT
5
3
2
100
7
100
23
MINIMUM
CHARAC-
TERISTICS
VALUE
5 7 101 2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
7
5
SUPPLY
VOLTAGE
3 MAIN CURRENT
MAIN
2 VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
101
VD = 200V
f = 3Hz
7
5
I QUADRANT
3
MINIMUM
CHARAC-
2 TERISTICS
VALUE
100
III QUADRANT
7
100 2 3 5 7 101 2 3
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
IRGT III
4
3
2 IRGT I
102
7 IFGT I
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Mar. 2002
Share Link: 