M7085G(2012) 데이터 시트보기 (PDF) - Unisonic Technologies
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M7085G Datasheet PDF : 7 Pages
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M7085
CMOS IC
APPLICATION INFORMATION(Cont.)
P-Channel MOSFET Selection(Q1)
An external P-Channel power MOSFET must be used the UTC M7085 key selection criteria for the power for the
P-Channel are the maximum Drain-Source voltage (VDS) MOSFET are the gate threshold, VGS, the “ON” resistance,
RDS(ON) and its total gate charge.
The voltage across the PFET when it is turned off is equal to the sum of the input voltage and the diode forward
voltage. The VDS must be selected to provide some margin beyond the input voltage.
RDS(ON)determines the conduction losses for each switching cycle, the lower the ON resistance, the higher the
efficiency can be chivied.
A power MOSFET with lower gate charge can give lower switching losses but the fast transient can cause
unwanted EMI to the system. Compromise in between is required during the design stage. Keeping the gate
capacitance below 2000pF is recommended.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-092, Ba
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