AS4C1M16F5-50TI 데이터 시트보기 (PDF) - Alliance Semiconductor

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AS4C1M16F5-50TI

5V 1M×16 CMOS DRAM (fast-page mode)

Alliance Semiconductor 

AS4C1M16F5

Absolute maximum ratings

Parameter

Input voltage

Input voltage (DQs)

Power supply voltage

Storage temperature (plastic)

Soldering temperature × time

Power dissipation

Short circuit output current

®

Symbol

Min

Vin

-1.0

VDQ

-1.0

VCC

-1.0

TSTG

-55

TSOLDER

–

PD

–

Iout

–

Max

+7.0

VCC + 0.5

+7.0

+150

260 × 10

1

50

Unit

V

V

V

°C

oC × sec

W

mA

DC electrical characteristics

Parameter

Symbol

Input leakage current IIL

Output leakage current IOL

Operating power

supply current

ICC1

TTL standby power

supply current

ICC2

Average power supply

current, RAS refresh mode ICC3

or CBR

Fast page mode average

power supply current ICC4

CMOS standby power

supply current

ICC5

Output voltage

VOH

VOL

CAS before RAS refresh

current

ICC6

Test conditions

0V ≤ Vin ≤ +5.5V,

Pins not under test = 0V

DOUT disabled, 0V ≤ Vout ≤ +5.5V

RAS, UCAS, LCAS, Address cycling;

tRC=min

RAS = UCAS = LCAS ≥ VIH

RAS cycling, UCAS = LCAS ≥ VIH,

tRC = min of RAS low after XCAS low.

RAS = VIL, UCAS or LCAS,

address cycling: tPC = min

RAS = UCAS = LCAS = VCC - 0.2V

IOUT = -5.0 mA

IOUT = 4.2 mA

RAS, UCAS or LCAS cycling, tRC = min

-50

-60

Min Max Min Max Unit Notes

-5 +5 -5 +5 µA

-5 +5 -5 +5 µA

– 170 – 160 mA 1,2

– 2.5 – 2.5 mA

– 170 – 160 mA 1

– 120 – 110 mA 1, 2

– 2.0 – 2.0 mA

2.4 – 2.4 – V

– 0.4 – 0.4 V

– 170 – 160 mA

4/11/01; v.0.9.1

Alliance Semiconductor

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