IS41LV44054-60JI 데이터 시트보기 (PDF) - Integrated Silicon Solution
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IS41LV44054-60JI Datasheet PDF : 17 Pages
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IS41C4405X
IS41LV4405X SERIES
ISSI ®
Functional Description
The IS41C4405x and IS41LV4405x are CMOS DRAMs
optimized for high-speed bandwidth, low power applications.
During READ or WRITE cycles, each bit is uniquely
addressed through the 11 or 12 address bits. These are
entered 11 bits (A0-A10) at a time for the 2K refresh
device or 12 bits (A0-A11) at a time for the 4K refresh
device. The row address is latched by the Row Address
Strobe (RAS). The column address is latched by the
Column Address Strobe (CAS). RAS is used to latch the
first nine bits and CAS is used the latter ten bits.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum tRAS time has expired. A new
cycle must not be initiated until the minimum precharge
time tRP, tCP has elapsed.
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time speci-
fied by tAR. Data Out becomes valid only when tRAC, tAA,
tCAC and tOEA are all satisfied. As a result, the access time
is dependent on the timing relationships between these
parameters.
Write Cycle
A write cycle is initiated by the falling edge of CAS and
WE, whichever occurs last. The input data must be valid
at or before the falling edge of CAS or WE, whichever
occurs last.
Auto Refresh Cycle
To retain data, 2,048 refresh cycles are required in each
32 ms period, or 4,096 refresh cycles are required in each
64ms period. There are two ways to refresh the memory:
1. By clocking each of the 2,048 row addresses (A0
through A10) or 4096 row addresses (A0 through A11) with
RAS at least once every 32 ms or 64ms respectively.
Any read, write, read-modify-write or RAS-only cycle
refreshes the addressed row.
2. Using a CAS-before-RAS refresh cycle. CAS-before-RAS
refresh is activated by the falling edge of RAS, while
holding CAS LOW. In CAS-before-RAS refresh cycle,
an internal 9-bit counter provides the row addresses
and the external address inputs are ignored.
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Power-On
After application of the VCC supply, an initial pause of
200 µs is required followed by a minimum of eight
initialization cycles (any combination of cycles containing
a RAS signal).
During power-on, it is recommended that RAS track with
VCC or be held at a valid VIH to avoid current surges.
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. C
06/24/01
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