MA2C723 데이터 시트보기 (PDF) - Panasonic Corporation
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MA2C723 Datasheet PDF : 2 Pages
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Schottky Barrier Diodes (SBD)
MA2C723
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
• Allowing to rectify under (IF(AV) = 200 mA) condition
• Sealed in DO-34 (DHD) package
• Allowing high-density mounting (5 mm pitch insertion)
• High reliability
φ 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
Unit : mm
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Non-repetitive peak forward
IFSM
1.5
A
surge current*
Peak forward current
IFM
300
mA
Forward current (DC)
Junction temperature
Storage temperature
IF(AV)
200
mA
Tj
150
°C
Tstg
−55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
2
φ 1.75 max.
1 : Casthode
2 : Anode
JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VR = 30 V
VF
IF = 200 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
50
µA
0.55
V
30
pF
3.0
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
I Cathode Indication
Color band in pink
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
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