MA3D652 데이터 시트보기 (PDF) - Panasonic Corporation
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MA3D652 Datasheet PDF : 3 Pages
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Fast Recovery Diodes (FRD)
MA3D652 (MA6D52)
Silicon planar type (cathode common)
For high-frequency rectification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
φ 3.2±0.1
• Low forward voltage VF
• Fast reverse recovery time trr
• TO-220D (Full-pack package) with high dielectric breakdown
voltage
• Easy-to-mount, caused by its V cut lead end
1.4±0.2
1.6±0.2
2.6±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
c type) Repetitive peak reverse voltage VRRM
200
V
n d ge. ed Non-repetitive peak reverse
VRSM
200
V
sta tinu surge voltage
a e cycle iscon Forward current (Average)
IF(AV)
20
A
life d, d Non-repetitive peak forward
IFSM
100
A
n u duct type surge current *
te tin Pro ued Junction temperature
four ntin Storage temperature
Tj
−40 to +150
°C
Tstg
−40 to +150
°C
wing disco Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
2.54±0.30
5.08±0.50
123
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
Internal Connection
123
ain oncludes fpoell,oplaned ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed in ce ty Parameter
Symbol
Conditions
Min Typ Max Unit
tinu nan Forward voltage
M is con inte Repetitive peak reverse current
D ance/Ditsype, ma Reverse recovery time *
inten nce Thermal resistance (j-c)
Ma tena Thermal resistance (j-a)
VF
IRRM1
IRRM2
trr
Rth(j-c)
Rth(j-a)
IF = 10 A, TC = 25°C
VRRM = 200 V, TC = 25°C
VRRM = 200 V, Tj = 150°C
IF = 1 A, IR = 1 A
1.0
V
100 µA
10
mA
70
ns
3.0 °C/W
63 °C/W
main Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
ed 2. Absolute frequency of input and output is 10 MHz.
(plan 3. *: trr measurement circuit
50 Ω
50 Ω
D.U.T
5.5 Ω
trr
IF
IR
0.1 × IR
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SKJ00004BED
1
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