MA4E1310 데이터 시트보기 (PDF) - M/A-COM Technology Solutions, Inc.

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MA4E1310

GaAs Flip Chip Schottky Barrier Diode

M/A-COM Technology Solutions, Inc. 

MA4E1310

GaAs Flip Chip Schottky Barrier Diode

M/A-COM Products

Rev. V3

Electrical Specifications @ + 25 °C

Parameters and Test Conditions

Junction Capacitance at 0V at 1 MHz

Total Capacitance at 0V at 1 MHz1

Slope Resistance 2

Forward Voltage at 1mA

Reverse Breakdown Voltage at @ 10uA

SSB Noise Figure ( Estimated )

Symbol

Cj

Ct

Rd

Vf1

Vbr

NF

Units

pF

pF

Ohms

Volts

Volts

dB

MA4E1310

Min.

Typ.

Max.

.010

.025

.040

.045

7

9

.60

.70

.80

4.5

7

6.5

Notes:

1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.

2. Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA)

2

ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

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Visit www.macom.com for additional data sheets and product information.

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product(s) or information contained herein without notice.

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