MA745 데이터 시트보기 (PDF) - Panasonic Corporation
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MA745 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA3J745 (MA745)
Silicon epitaxial planar type
For switching
I Features
• Low forward voltage VF , optimum for low voltage rectification
• Low VF type of MA3X704A (MA704A)
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• S-Mini type 3-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
VR
30
V
VRM
30
V
IF
30
mA
IFM
150
mA
Tj
125
°C
Tstg
−55 to +125
°C
0.3+–00.1
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
5°
Unit: mm
0.15+–00..015
0.9±0.1
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Marking Symbol: M2M
Internal Connection
3
I Electrical Characteristics Ta = 25°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
30
µA
0.3
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00058AED
1
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