MAC223FP 데이터 시트보기 (PDF) - Motorola => Freescale
부품명
상세내역
제조사
MAC223FP Datasheet PDF : 4 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems,
heater controls, motor controls and power supplies; or wherever full-wave silicon-
gate-controlled devices are needed.
• Off-State Voltages to 800 Volts
• All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
• Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
• Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or
Four Modes (MAC223AFP Series)
Order this document
by MAC223FP/D
MAC223FP
Series
MAC223AFP
Series
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
200 thru 800 VOLTS
MT2
MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25° unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4FP, MAC223A4FP
MAC223-6FP, MAC223A6FP
MAC223-8FP, MAC223A8FP
MAC223-10FP, MAC223A10FP
On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C,
preceded and followed by rated current)
Circuit Fusing (t = 8.3 ms)
p Peak Gate Power (t 2 µs)
p Average Gate Power (TC = +80°C, t 8.3 ms)
p Peak Gate Current (t 2 µs)
p Peak Gate Voltage (t 2 µs)
p RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature
Storage Temperature Range
Mounting Torque
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VGM
V(ISO)
TJ
Tstg
—
Value
200
400
600
800
25
250
260
20
0.5
2
±10
1500
–40 to +125
–40 to +150
8
Unit
Volts
Amps
Amps
A2s
Watts
Watt
Amps
Volts
Volts
°C
°C
in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
RθJC
1.2
RθCS
2.2
RθJA
60
°C/W
°C/W
°C/W
Motorola Thyristor Device Data
1
© Motorola, Inc. 1995
Share Link: 