MAC224A 데이터 시트보기 (PDF) - ON Semiconductor

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MAC224A

TRIACs 40 AMPERES RMS 200 thru 800 VOLTS

ON Semiconductor 

MAC224A Series

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

Symbol

RθJC

RθJA

TL

Value

1.0

60

260

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(Rated VDRM, VRRM; Gate Open)

ON CHARACTERISTICS

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

—

—

10

—

—

2.0

" p p Peak On–State Voltage

(ITM = 56 A Peak, Pulse Width 2 ms, Duty Cycle 2%)

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(+), G(–); MT2(+), G(–)

MT2(–), G(+)

VTM

IGT

—

1.4

1.85

—

25

50

—

40

75

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(–), G(–); MT(+), G(–)

MT2(–), G(+)

VGT

—

1.1

2.0

—

1.3

2.5

Gate Non-Trigger Voltage

(VD = 12 V, TJ = 125°C, RL = 100 Ω)

All Quadrants

VGD

0.2

—

—

" Holding Current

(VD = 12 Vdc, Gate Open, Initiating Current = 200 mA)

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA)

DYNAMIC CHARACTERISTICS

IH

—

30

75

tgt

—

1.5

—

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, TC = 125°C)

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 56 A Peak, Commutating

di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)

dv/dt

dv/dt(c)

—

50

—

—

5.0

—

Unit

°C/W

°C

Unit

µA

mA

Volts

mA

Volts

Volts

mA

µs

V/µs

V/µs

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