DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MASW-009444 데이터 시트보기 (PDF) - M/A-COM Technology Solutions, Inc.

부품명
상세내역
제조사
MASW-009444
MA-COM
M/A-COM Technology Solutions, Inc. MA-COM
MASW-009444 Datasheet PDF : 5 Pages
1 2 3 4 5
MASW-009444
GaAs SP2T 1.8 V Switch
DC - 6.0 GHz
Rev. V1
Electrical Specifications:5 TA = 25°C, VC = 1.8 V, Z0 = 50
Parameter
Test Conditions
Units Min.
Typ.
Max.
Insertion Loss
DC - 1 GHz
1 - 2 GHz
2 - 3 GHz
0.2
.45
dB
0.3
0.4
Isolation
DC - 1 GHz
1 - 2 GHz
2 - 3 GHz
22
28
dB
23
19
VSWR
DC - 2.5 GHz
2.5 - 3 GHz
dB
<1.3
<1.3
IP3
P1dB
Trise, Tfall
Two Tone +10 dBm, 5 MHz Spacing, >50 MHz
PIN = 0 dBm VC = 0/2.5 V
dBm
47
VC = 1.8V
VC = 2.7V
dBm
15
24
10% to 90% RF, 90% to 10% RF
ns
10
Ton, Toff
50% control to 90% RF, and 50% control to 10% RF ns
15
Transients
In Band
mV
30
Control Current
|VC| = 1.8V
µA
5
10
5. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, i.e. 1000 pF for 100 - 500 MHz, 39 pF for 0.5 - 3.0 GHz
Truth Table 6
V1
V2
RFC - RF1 RFC - RF2
0V
+1.8 to 5 V
On
Off
+1.8 to 5 V
0V
Off
On
6. External DC blocking capacitors are required on all RF ports
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]