MBR16100CT(2006) 데이터 시트보기 (PDF) - ON Semiconductor

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MBR16100CT
(Rev.:2006)

SWITCHMODE
Power Rectifier

ON Semiconductor 

MBR16100CT

THERMAL CHARACTERISTICS

Characteristic

Maximum Thermal Resistance, Junction−to−Case

Junction−to−Ambient

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 8.0 Amps, TC = 125°C)

(iF = 8.0 Amps, TC = 25°C)

(iF = 16 Amps, TC = 125°C)

(iF = 16 Amps, TC = 25°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TC = 125°C)

(Rated dc Voltage, TC = 25°C)

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

Symbol

RqJC

RqJA

vF

iR

Value

2.0

60

0.6

0.74

0.69

0.84

5.0

0.1

Unit

°C/W

V

mA

100

100

10

10

125°C

1

75°C

125°C

1

75°C

175°C

TJ = 25°C

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Per Diode

175°C

TJ = 25°C

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 2. Maximum Forward Voltage Per Diode

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