MBRF20100CT 데이터 시트보기 (PDF) - Vishay Semiconductors
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MBRF20100CT Datasheet PDF : 5 Pages
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New Product
MBR(F,B)2090CT & MBR(F,B)20100CT
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
100
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
Junction to Case
10
1
0.1
0.01
MBR(B)
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
0.001
0.1
1
10
t - Pulse Duration (s)
MBRF
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89033
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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