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MBRD350T4G 데이터 시트보기 (PDF) - ON Semiconductor

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MBRD350T4G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBRD350T4G Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
TYPICAL CHARACTERISTICS
100
10
150°C
125°C
1.0
TJ = 25°C
75°C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100
40
TJ = 150°C
20
10
125°C
4.0
2.0
100°C
1.0
0.4
75°C
0.2
0.1
0.04
0.02
0.01
25°C
0.004
0.002
0.001
0
10
20
30
40
50
60
70
VR, REVERSE VOLTAGE (VOLTS)
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
Figure 2. Typical Reverse Current
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
TJ = 150°C
10
IPK/IAV = 20
SINE
WAVE
5
dc
SQUARE
WAVE
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Average Power Dissipation
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