MBRM120L 데이터 시트보기 (PDF) - ON Semiconductor
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MBRM120L Datasheet PDF : 5 Pages
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MBRM120L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TC = 135°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 135°C)
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
20
V
1.0
A
2.0
A
50
A
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg
TJ
dv/dt
−55 to 150
°C
−55 to 125
°C
10,000
V/ms
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Rtjl
Rtjtab
Rtja
35
°C/W
23
277
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 20 V)
(VR = 10 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
VF
TJ = 25°C TJ = 85°C
V
0.34
0.26
0.45
0.415
0.65
0.67
IR
TJ = 25°C TJ = 85°C
mA
0.40
25
0.10
18
10
10
TJ = 125°C
TJ = 85°C
1.0
TJ = 25°C
TJ = 125°C
1.0
TJ = 85°C
TJ = −40°C
0.1
0.1
0.3
0.5
0.7
0.9
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.1
TJ = 25°C
0.3
0.5
0.7
0.9
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 2. Maximum Forward Voltage
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