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MBRS360 데이터 시트보기 (PDF) - ON Semiconductor

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MBRS360 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBRS360T3
Preferred Devices
Surface Mount
Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL94, VO
Weight: 217 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model, A
Human Body Model, 1B
Marking: B36
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
60 VOLTS
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
YWW
B36
B36 = Device Code
Y = Year
W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MBRS360T3
SMC
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. 0
Publication Order Number:
MBRS360T3/D

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